Improved electronic structure and optical properties of sp-hybridized semiconductors using LDA+U SIC
نویسندگان
چکیده
منابع مشابه
Improved Electronic Structure and Optical Properties of sp-Hybridized Semiconductors Using LDA+USIC
We propose the local density approximation (LDA) plus an on-site Coulomb self-interaction-like correction (SIC) potential for describing sp-hybridized bonds in semiconductors and insulators. We motivate the present LDA+USIC scheme by comparing the exact exchange (EXX) hole with the LDA exchange hole. The LDA+USIC method yields good band-gap energies Eg and dielectric constants ε(ω≈ 0) of Si, Ge...
متن کاملinvestigation of the electronic properties of carbon and iii-v nanotubes
boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...
15 صفحه اولFirst-Principles Study of Structure, Electronic and Optical Properties of HgSe in Zinc Blende (B3) Phase
In this paper, the structural parameters, energy bands structure, density ofstates and charge density of HgSe in the Zincblende(B3) phase have been investigated.The calculations have been performed using the Pseudopotential method in theframework of density functional theory (DFT) by Quantum Espresso package. Theresults for the electronic density of states (DOS) show tha...
متن کاملcontrol of the optical properties of nanoparticles by laser fields
در این پایان نامه، درهمتنیدگی بین یک سیستم نقطه کوانتومی دوگانه(مولکول نقطه کوانتومی) و میدان مورد مطالعه قرار گرفته است. از آنتروپی ون نیومن به عنوان ابزاری برای بررسی درهمتنیدگی بین اتم و میدان استفاده شده و تاثیر پارامترهای مختلف، نظیر تونل زنی(که توسط تغییر ولتاژ ایجاد می شود)، شدت میدان و نسبت دو گسیل خودبخودی بر رفتار درجه درهمتنیدگی سیستم بررسی شده اشت.با تغییر هر یک از این پارامترها، در...
15 صفحه اولOptical Properties of Semiconductors
1 Rolf W. Martin, Esslingen University of Applied Sciences, Department of Basic Sciences, Flandernstr. 101, 73732 Esslingen, Germany, [email protected] 2 Otto A. Strobel, Esslingen University of Applied Sciences, Department of Basic Sciences, Flandernstr. 101, 73732 Esslingen, Germany, [email protected] Abstract – A computer based laboratory experiment in the physics lab fo...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Brazilian Journal of Physics
سال: 2006
ISSN: 0103-9733
DOI: 10.1590/s0103-97332006000300014